I try to develop an application where I need to switch 55V at 20A in both directions using MOSFETs.
Because of the high current, I decided to use N-MOSFETs (because they are available with lower rdson) back to back and using a photvoltaic MOSFET driver to switch the gates.
My problem now is that the load I try to switch has a lot of capacitance (about 20 mF) which kills my MOSFETs every time because of the high power dissipation during the switching transition.
I already tried to to use an RC Lowpass to drive the gates more slowly through the threshold but the power dissipation is still too high, peaking at 200W (see simulation)
Is there any way I can limit the inrush current using this back to back topology?