As far as I know, for an NPN-BJT, when both (base-emitter and base-collector) are forward biased; we consider the operation to be in saturation mode. Here, the transistor functions as a short circuit between emitter and collector. [SEE IMAGE BELOW]
However, I expect quite different.
With the electric field directions as shown above;
I expect that a large number of electrons present in the emitter would now easily cross the emitter-base junction due to a reduced depletion region and supporting electric field.
Similar should be the case for the collector-base junction. (Electrons from collector would now be arriving at base)
So now, we have electrons coming in from emitter to base, and collector to base junction.
We therefore expect the direction of currents to be base to collector, and base to emitter.
Overall, we have a large current passing to the base, which is supplying current to emitter and collector.
Now, this is nowhere similar to a short circuit situation.
Where have I gone wrong?
Also, please explain the actual physical mechanism of the functioning of this BJT in saturation mode.