I read in applications of tunnel diodes that it can be used as a memory element. I am not able to justify or verify this statement. It would be very helpful if a circuit showing logic storage using a tunnel diode is included in the answer.
By providing a resistive load line for a tunnel diode, the memory effect can be exploited.
As a kid, buying a tunnel diode from Lafayette Electronics, I found 100 ohm series resistors provided a STEEP enough load line that I could map out the entire I_V curve (this from memory, of decades_ago tinkering).
However, high_resistance load lines would have the SNAP between states; a coupling capacitor would inject the charge transient needed to flip between states.
I did not evaluate the state_store behavior.
I did use the Tunnel Diode as an oscillator.
Andy: from what I recall of the I_V curve(s) for a tunnel/Esaki diode
- a HIGH VOLTAGE and a HIGH RESISTANCE provide the snap_memory
I'd draw an I_V curve, but stackX no longer allows my browser that ability.
This is just to supplement the accepted answer by @analogsystemsrf. Since the OP specifically expressed an interest in seeing a tunnel diode circuit where the tunnel diode was the logic storage element, the next two figures are scans from my hardcopy of the RCA Tunnel Diodes for Switching and Microwave Applications, Technical Manual TD-30, ©1963 by RCA.
Credit: My scan of page 42 of the reference above.
Credit: My scan of page 43 of the reference above.
There is lots more in this old $1.50 technical manual!