I was reading an answer to this other question which asks about saturation of a BJT transistor.
In that answer it states to be saturated you should shoot for a 1:10 ratio or more between base current and collector current. While this is perfectly acceptable, the MMBT5087 transistor meantioned in that question specifies a minimum hFE value of ~150.
In theory the base current can be reduced until it's just bigger than a 1:hFE ratio with the collector current. However, for practical designs I would assume designing close to the 1:150 ratio is risky, even if this is the specified minimum value (if I'm reading the datasheet right).
My question is what type of safety factoring should I aim for (assuming I want to minimize base current)? A 1:10 ratio seems a bit excessive as that provides a FOS of 15. Also, this specific example is a PNP type transistor. Are there any different recommendations for NPN type transistors?