I'm not sure it entirely counts. It certainly isn't useful in the way that the current-controlled voltage source is useful as the original transcitor paper describes, but more importantly, I am unsure how much its voltage output depends on current characteristics.

The gate-controlled diode is essentially an ordinary diode, but with a MOS gate fabricated on top of it. The electric field present on the MOS gate can increase the width of the depletion region, thereby controlling the breakdown voltage. I thought that this would make it a voltage-controlled voltage source (VCVS) in the same way that a MOSFET can be configured as a voltage-controlled current source (VCCS). But on the other hand, the configuration of the current-controlled voltage source transcitor in the original transcitor article appears to be able to develop voltage without needing a specific loading. (Then again, the hall-effect device described in the original paper appears to be a (passive, albeit nonreciprocal) hall-effect gyrator serving to convert current into voltage.)

  • 3
    \$\begingroup\$ Be careful with your language. It is not true that a MOSFET can be configured as a "voltage-controlled current source" because it can not source current by itself. In some circuits the MOSFET can be modeled as a voltage-controlled current source, but that model is only useful in certain situations. It's a big difference. \$\endgroup\$ Jan 12, 2021 at 19:31
  • \$\begingroup\$ @Elliot -- "mosfet as VCCS" is the high level paradigm by the first paper that is referenced in the question, in its Figure 1 introducing their objectives \$\endgroup\$
    – Pete W
    Jan 12, 2021 at 20:29
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    \$\begingroup\$ The I-V curves look different. Doesn't that mean they are not the same? \$\endgroup\$
    – Aaron
    Jan 12, 2021 at 20:52
  • \$\begingroup\$ @PeteW I take your point, but I wasn't particularly impressed with the paper either. \$\endgroup\$ Jan 12, 2021 at 23:28


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