When in general is it easier, even preferable, to use a dual isolated gate driver on an H-bridge with IGBT power transistors, rather than separate high side and low side drivers; what if any are the guidelines?
For example, I want to use an IGBT H-Bridge module as the main component of a switch in a 12V DC circuit to an array of electromagnets whose polarities require periodic alternation at a rate of around 4 to 8 Hz only (with the aim of creating a rotating magnetic field). In that case, would a dual gate driver for each half of the H-bridge -- such as an ISOdriver from 'Silicon Labs' etc. -- with a bootstrap circuit* be simpler and more straightforward than using separate HS/LS drivers, or even superior? *Vgs 15V required.