I have a 1.8V logic signal that I would like to use to control an enhancement N-channel MOSFET to switch current through a resistor from the drain to a 3V power rail.
It's in a very power sensitive design. All of the enhancement-mode mosfets I looked at seem to specify max "Zero Gate Voltage Drain Current" Idss as 1 μA, which means if I would want the resistor/drain junction to go close to the 3V rail - say within 0.27V - the resistor would need to be a 270KΩ pull-up, and a 10μA on current, all of which are significant currents in a small battery powered application.
Update: I have limited board space, and need about 6 off devices. I have looked at some TI FemtoFET devices (bit of a pain to place as very small) and TPS22860 ultra low leakage load switches which might work.
Any suggestions - should I be using a different type of device?