As @Akohlsmith stated in his answer, this circuit is only good for up to 20v or so, due to the MOSFET's gate voltage limit, \$\text{V}_\text{GSS}\$.
If you look at the FDS4559 Datasheet, page 1 states \$\text{V}_\text{GSS}\text{ Gate-Source Voltage ±20V ±20V}\$, which puts an absolute max limit of +/-20v to either gate with respect to source.
Even if Zeners are used elsewhere to limit gate voltage, a ripple or pulse could cause the gate to go beyond ±20V due to parasitic lead/trace inductance. Most MOSFETs are very sensitive to gate overvoltage - even if it only happens once, for a nanosecond, through a 10k resistor, the MOSFET can be instantly destroyed.
The MOSFET's \$\text{C}_\text{iss}\$ (intrinsic gate capacitance) actually slows fast voltage changes, and so is a boon to fast switching. Many MOSFETs are employed in fast switching roles, so large gate capacitance is undesired and even detrimental. The FDS4559 only has ~700pF, which is relatively low, making it good for moderately fast switching. This low amount of gate capacitance also makes it more susceptible to gate overshoot than others.
I've seen a bidirectional TVS used to clamp gate voltage to ±15V with reasonable success. It must be placed as close as possible to the gate-source pins to reduce lead/trace inductance. Even TVS have a response time (shorter pin/trace lengths are better.)
You could add Zeners in series with R1 and R2 to limit the gate voltage, but then the minimum voltage let through the circuit is increased (and there is parasitic capacitance and inductance added.)