I know that chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, high-performance solid materials. The process is often used in the manufacture of semiconductors to produce thin films, there are several CVD methods, such as LPCVD, PECVD etc. These methods can be used to deposit a thin film on the substrate controllable with process parameters such as temperature, pressure, and precursor gases.
Why is CVD not used to deposit gate oxides in the manufacture of NMOS devices?
I can't find the reasons and the main causes.