I have a damaged p-type mosfet. Resistance of drain to gate: almost zero , Drain to source : below 10Mohm(some are xxxkohm).
I think ESD is injected into drain.
So. I want to know the symptoms(resistance changes) difference when gate insulator is breakdown due to gate high voltage.
Any different? Also, will drain to source resistance change or not, when ESD injected at gate?