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I am trying to select an appropriate diode for the gate circuit of a power MOSFET. I am considering the STMicro STPS140Z Schottky diode for this application; however as I am reading the datasheet there is a specification for "Repetitive Peak Reverse Current". I assume this means that I cannot apply a reverse current greater than what is specified (pulse width of 2us over a 1kHz frequency? Am I reading this correctly?

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  • \$\begingroup\$ This probably won't make much sense unless you include an example of the circuit (they do have a tool to draw circuits and edit the question). \$\endgroup\$
    – Voltage Spike
    Aug 23, 2021 at 16:52

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\$V_{RRM}=40V~,~ I_{RRM}=0.5A ~~2us\$ on @ 1kHz ABS MAX

This is a zener 20 W-pk *2/500us = 80 mW avg power-limiting condition outside the normal operation. The reverse current bandgap cannot handle the same Pavg as the forward bandgap.

In LEDs and BJT-BE junctions the ratio of forward/reverse current ratio is similar . e.g. some 30mA LEDs are -5V 10uA but actual limit for voltage before burnout will be higher.

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