Here are my simulations about "starting" behavior.
UJ3C120080K3S for SiC (1200V 8A) and 6EWH06FN-E (600V 6A) for diode (should be changed). I will update ... diode voltage too low. Changed for a 1200 V. Peaks are same.
You can see that there is (ok, there are short ... but not negligible when choosing devices ...) important peaks of voltage of capacitor and current of inductor. (Can be "avoided" or "admissible" by an "intelligent starting" phase, duty cycle = ~ 5%, then increased progressively until what is needed)

NB : Simulation done at 200 kHz (duty cycle = 50 %)
For stationary picture, add : .ic v(Vc) 400 and .ic i(L1) 2.5 ...

V(out)
is because you have an.IC
condition for a node namedOUT
, but there's no such label attached, anywhere. Therefore your.IC
has no effect. Try adingic=380
to the capacitor, maybe alsorser=10m
. It might help to addrser=10m rpar=10k
to the inductor,rser=10m cpar=1m
to the voltage source, add a capacitor across the SiC with100p rser=100
. There's not much else to do since the library that I have (from genesicsemi.com, Cree needs registration) is encrypted. \$\endgroup\$