Here are my simulations about "starting" behavior.
UJ3C120080K3S for SiC (1200V 8A) and 6EWH06FN-E (600V 6A) for diode (should be changed). I will update ... diode voltage too low. Changed for a 1200 V. Peaks are same.
You can see that there is (ok, there are short ... but not negligible when choosing devices ...) important peaks of voltage of capacitor and current of inductor. (Can be "avoided" or "admissible" by an "intelligent starting" phase, duty cycle = ~ 5%, then increased progressively until what is needed)
NB : Simulation done at 200 kHz (duty cycle = 50 %)
For stationary picture, add : .ic v(Vc) 400 and .ic i(L1) 2.5 ...
V(out)is because you have an
.ICcondition for a node named
OUT, but there's no such label attached, anywhere. Therefore your
.IChas no effect. Try ading
ic=380to the capacitor, maybe also
rser=10m. It might help to add
rser=10m rpar=10kto the inductor,
rser=10m cpar=1mto the voltage source, add a capacitor across the SiC with
100p rser=100. There's not much else to do since the library that I have (from genesicsemi.com, Cree needs registration) is encrypted. \$\endgroup\$