IGBT Turn-on switching energy loss

I found this formula to calculate $$\E_{\text{on}}\$$ for an IGBT:

$$E_{\text{on}} = \int\limits_{t_1}^{t_2}p_v(t)\text{ d}t = \int\limits_{t_1}^{t_2}v_{CE}(t) \times i_C(t)\text{ d}t$$

How can I calculate $$\E_{\text{on}}\$$ from datasheet parameters? I'm confused how to determine/calculate $$\t_1\$$ and $$\t_2\$$.

I have a new question here, are these t1 and t2 equal to ton(tdn+tr)?

Here is the data sheet: Semikron Datasheet IGBT

• Eon is usually a datasheet parameter, no calculation needed. Commented Nov 3, 2021 at 15:43
• Hearth is right. Eon is already given in the datasheet. Commented Nov 3, 2021 at 15:47
• The Eon can be ratiometrically scaled for your working voltage/current against their test voltage/current (quite linear). HOWEVER... the turn-on speed can't... be mindful of your gateresistor vs the testcase gate resistor (99% of the time the stated value is good enough anyway)
– user16222
Commented Nov 3, 2021 at 15:51
• Yes, Eon is there. I actually want to use the formula to check if i get the same Eon with the one from datasheet, but i'm stuck with t1,t2. Anyway, thanks for the answers
– Laz
Commented Nov 3, 2021 at 15:53
• @Laz It's not really possible to calculate from other parameters, it has to be measured. This is because Vce and Ic will be varying throughout the switching transient. Your formula also ignores the contribution from gate charging current (which is normally significantly smaller, so ignoring it is well-founded, but if you want to be as precise as possible you'd need to include it). Commented Nov 9, 2021 at 13:50