I'm in the process of building a medium power amplifier for the 20m band (14MHz) and I'm experimenting with bias circuits. The amplifier is a classic BJT push-pull arrangement with a transformer input having a centre tapped secondary into which the bias is fed.
I've come across the bias circuit shown below and I've been using it with mixed results.
simulate this circuit – Schematic created using CircuitLab
One thing I haven't done is thermally bonded the controlling transistor (Q2 above) to the power transistor heatsink (I should clarify that this is the heatsink for the push-pull power transistors and not Q1 shown above) and I wanted to generate an expression that would indicate how the output (Vout) changes with the temperature of Q2. I always find these coupled transistor circuits difficult to analyze, but I've arrived at an expression for VE that I find interesting.
$$V_{b1}=V_{cc} - I_c R_c$$
$$V_{E} = V_{b1} - V_{be1} = V_{cc} - I_c R_c - V_{be1}$$
$$I_{c} = I_{b2}\beta_2$$
$$I_{b2} = (V_{E} - V_{be2})/R_{b} - V_{be2}/R_{\text{adj}}$$
If I combine these expressions into an equation for VE, I get:
$$V_E = \frac{V_{cc}+V_{be2}(\beta_2 R_c R_t)-V_{be1}}{\beta_2 R_c R_{\text{adj}} + 1}$$ where \$R_t = R_b + R_{\text{adj}}\$
If we assume the Rt is equal to Radj and neglect the + 1 in the denominator, then as Q2's beta rises due to temperature, the value of VE would seem to drive towards Vbe2. Do I have that right?
But, Vbe2 is decreasing as a result of the rise in temperature. Does this suggest that Q2 should be thermally bonded?