I designed/had built a PCB to handle higher current draw. The P Channel MOSFET (Q1) I selected is used as a ON/OFF switch for the rest of the circuitry. R2 gets grounded through a switch when flipped "ON", hence I just have it grounded in the picture. It is getting very hot (230F) at 20A current draw after about 5 minutes of being on.
Q1 = SQM120P06-07L_GE3
D1 = SMAZ10-13-F
R1 = 1/10W 0603
R2 = 1/4W 0603
The MOSFET has a Absolute Max Vgs of +/-20V
When measuring the voltage across the Gate and Source, I get -10V which the datasheet says should provide the minimum RDS(on).
The MOSFET is properly heatsinked on 3 layers of 1oz copper through vias.
My question is, why is this getting so hot? Did I incorrectly select R1, R2, or D1?