It makes sense that when VGS = VDS, the channel resistance (lower slope) is large compared to the resistance in ohmic region (steeper slope,) so a MOSFET can be used as a resistor.
From a previous chapter I know that a BJT acts as a diode when the base is connected to the collector.
As I'm new to MOSFET circuits, I always compare MOSFETs to BJTs to understand better. Almost all the BJT circuits work just fine (logic/functionality wise) when we replace the BJT with a MOSFET.
Now it is confusing because with a BJT, the arrangement gives a diode fixing the base emitter drop to around 0.7 V.
Sith MOSFET, the arrangement gives just a resistor, not a diode.
Gate-drain shorted MOSFET gives a resistor, but base-collector shorted BJT gives a diode. Why?