I want to use a totem pole BJT driver for a P-channel MOSFET. Various google searches brought me to the following circuit:
In Olin Lathrop's answer to this question it is quite well described. pull-push gate driver for H bridge circuit
However during simulation of this circuit I found 1 issue, where (after excessive googling and reading SO questions / answers) I still cannot find the right solution.
The problem is the peak power during switching of the PNP transistor. The power dissipation between the NPN and the PNP BJT is not balanced and the peak is quite high (and the unbalance increases, with increasing voltages). During the transition / switching it reaches ~2.5 W for the PNP BJT and 600 mW for the NPN. Which is logic as the PNP emitter-collector voltage, is the full 36 V, when it is not conducting. I have just enough space to fit 2x SOT23 parts for the transistors and out of availabilty / cost reasons I would like to stick with some standard series, such as BC846 or the little beefier MMBT5551 (and ther complementary ocunterparts). Most of the SOT23 parts in below 500 mW power limit, while some are ~1 W power limit, but none are in the range of 2 W.
I would like to have fast switching transitions for the MOSFET M3.
The PWM / switching frequency is about 55 kHz.
So my question: Is there a smart way to reduce the peak power of Q6, without sacrificing switching speed?
Bonus question (in case I'm on the wrong track here): Am I trying, to make somethign work, that is not supposed to work, and I have to for example give up on the SOT23 requirement? Would another configuration / circuit be more suitable for what I want to achieve?