- Variation in leakage currents
This brief list of 10 TVS design guidelines should be useful.
MDE Semiconductor - Typical TVS design aids
Especially note the first one:
- "Leakage current will double for every 10 to 15°C rise in temperature, depending upon the voltage (usually referenced to the ambient temperature."
So if typical leakage is specified at ambient temperature of say 20 degrees C, and max operating temperature is say 120 degrees C, the leakage current at Tmax could be expected to increase over Itypical by a factor of
or about a factor of 64 for a doubling temperature of 15 degrees
and by a factor of about 1000 for a doubling temperature of 10 degrees C (!!!)
TVS's have two current specifications - one is a specified current as the device starts to enter the rapid breakdown region and is more about the voltage that causes this current to flow.
The other is the typical leakage current when Vapplied is substantially less than Vbreakdown. You'd hope that these would be very substantially different in magnitude, and they are.
This TI application note How to select a surge diode may address the questions you are intending to ask.
They provide typical current with voltage curves and the explanation of Vbr and Vrwm may answer your query about typical amd maximum valuesof standoff current.
From the above link:
This Toshiba application note also looks useful. Basics of ESD Protection (TVS) Diodes
Page 14 shows a graph of leakage well below breakdown versus breakdown currents.
This 1 page Protek document Understanding TVS clamping also covers what you are asking but may need to be looked at carefully to extract the information.
Littlefuse - see Technical Resources tab.
Easybom - some value.
Selecting TVS's - some value.