I would like to obtain the RMS Input Voltage Noise (RTI) of the AD8428 preamplifier for the following setup
- range of 0.1 Hz to 150 Hz with 1st order lowpass filter, koeff = 1.57 ---> BW(bandwidth) = 150*1.57 = 235 Hz
From the Fig. 29 (RTI Voltage Noise Spectral Density vs Frequency) in the datasheet I determine the needed parameters for calculation:
- FL = 0.1 Hz, FC = 8 Hz, FH = 235.5 Hz
- with 1.5 nV/√Hz in the flat region and 15 nV/√Hz at 0.1Hz
Calculating the RMS voltage noise
The main idea of the calculation is to integrate the curve in the interesting bandwidth. But if I go into the details I found two ways with different results. All the calculations splits the curve into two regions: a 1/f region (with curve slope = 1/f) and a broadband region (with curve slope = 0) and integrating them separately.
Analog Devices MT-048 Tutorial:
for the 1/f region: $$v_{n,rms}(F_L, F_C) = v_{nw}\sqrt{ F_Cln\left[\frac{F_C}{F_L}\right]} = 1.5 \sqrt{ 8*ln\left[\frac{8}{0.1}\right]} = 8.881nV_{rms} $$ for the broadband region: $$v_{n,rms}(F_C,F_H) = v_{nw}\sqrt{F_H-F_C} = 1.5 \sqrt{235-8} = 22.599 nV_{rms}$$ Together: $$v_{n,rms}(F_L, F_H) = \sqrt{ 8.881^2+22.599^2} = 24.281 nV_{rms}$$ vnw is voltage noise density in the broadband region
vn,rms(FL,FC) is the RMS voltage noise in the 1/f region
vn,rms(FC,FH) is the RMS voltage noise in the broadband region
vn,rms(FL,FH) is the total rms voltage noise.
This method surprisingly doesn't use the voltage noise density at 0.1Hz which is 15 nV/√HzThe second method I found in this youtube video at 17:00:
For the 1/f region: $$ E_{nf} = e_{@f}\sqrt{F_L}*\sqrt{ln\frac{F_H}{F_L}} = 15*\sqrt{0.1}\sqrt{ln\left[\frac{235}{0.1} \right]} = 13.215 nV_{rms} $$ for the broadband region: $$ E_{nBB}=e_{nBB}\sqrt{BW} = 1.5 * \sqrt{235-0.1} = 22.989 nV_{rms} $$ together: $$E_{nv}=\sqrt{13.215^2+22.989^2} = 26.516 nV_{rms}$$
e@f is voltage noise density at 0.1Hz
enBB is voltage noise density in the broadband region
Enf is the RMS voltage noise in the 1/f region
EnBB is the RMS voltage noise in the broadband region
Env is the total rms voltage noise.
Conclusion
The main difference in two calculation is that the Analog Devices tutorial dont use (or they neglect) the voltage noise density at 0.1Hz in the 1/f region (15nV/√Hz). They using the noise voltage density for broadband region evrywhere. What do you think which calculation is more correct? Is there a mistake in Analog Devices tutorial?
EDIT
After looking at the answers and a bit of dive to the calculus, I can deliver a final precise analytic solution. The voltage noise density curve you can describe with an expression:
$$ e_n(f) = \frac{1}{f}+e_{n,bb} $$ where f is the frequency ebb is the noise level in the broadband region.
In order to obtain the RMS voltage noise for desired bandwidth, we need square the voltage noise spectral density to get a power noise density, then integrate it through desired bandwidth finally make a root square to obtain voltage RMS (this is the definition of RMS):
$$ \sqrt{\int_{F_L}^{F_H} {(e_{n}(f))^2} \,df}\ = \sqrt{\int_{F_L}^{F_H} {(\frac{1}{f} + e_{n,BB})^2} \,df}\ = \sqrt{\frac {-1}{2(F_H-F_L)} + 2e_{n,BB}[ln(F_H)-ln(F_L)] + e_{n,BB}^2(F_H-F_L)}$$
For the calculation, we used only the lowest and highest frequency of interest and broadband noise.
Substituting to the expression I get a noise of 23.51 nVrms which is very close to the numbers I get from the approximations.