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What is the actual reason behind IGBTs having lesser conduction losses than SiC MOSFETs? For the same application, I can see that an IGBT having the same power rating exhibits 10 times more switching losses but 3 times lesser conduction losses then SiC MOSFET.

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    \$\begingroup\$ MOSFET have an on-resistance and IGBT have an on-voltage (to 0th order approximation). High currents favor the latter. \$\endgroup\$
    – tobalt
    Commented Jan 3, 2023 at 13:32
  • \$\begingroup\$ For low current and/or low voltage, your first statement is not correct. \$\endgroup\$
    – winny
    Commented Jan 3, 2023 at 13:37
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    \$\begingroup\$ for IGBT 1.3V for 10A, 1.6V for 20A, 1.76V for 30A, 1.94V for 40A, 2.10V for 50A, 2.26V for 60A, 2.4V for 70A, \$\endgroup\$
    – Alison
    Commented Jan 3, 2023 at 15:35
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    \$\begingroup\$ For SiC Mosfet 4.6V for 60A, 3.65V for 50A,2.81V for 40A, 2V for 30A, 1.31V for 20A ans 0.62V for 10A \$\endgroup\$
    – Alison
    Commented Jan 3, 2023 at 15:37
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    \$\begingroup\$ You have answered the question in your two comments. As you can see the constant(ish) voltage drop of the IGBT is less efficient at low current and more efficient at high current 😊 \$\endgroup\$
    – tobalt
    Commented Jan 3, 2023 at 17:51

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