We are making a thesis where we use MOSFETs as an alternative radiation detector.
So to explain it, it works when the MOSFET is irradiated with an external radiation source; its voltage threshold increases, which will be used to determine the radiation dose.
I'm currently asking for help on how we measure the voltage threshold. BTW, we are using an N-channel MOSFET (model: IRFP250NPbF). Also in the datasheet provided by the manufacturer, it says here
VGS(th)/Gate Threshold Voltage Min: 2.0 ––– Max: 4.0 V.
There is a condition here with VDS = VGS, ID = 250µA.
Does this mean that to measure the VGS, we need to first satisfy the conditions?
To measure the voltage threshold, what node will we use to measure the VGS (th)?
Is it at the drain to the source terminal or still at the gate to the source terminal?
Feel free to share your thoughts, if you have any.
I would also like to add that we have already tried to supply a voltage at the gate with respect to the source terminal. We use a 4 V supply voltage, and when we tried to measure the VDS (drain to source voltage), there was a voltage drop, so we've got a 3.5 V. Also, we are using an Arduino to measure its voltage and a multimeter for checking.