I'm trying to get rid of this heat problem , I know that I have to use heat sinks according to it's specification , but the problem here is there's no space for that heat sink.
So I do have to need a method to calculate and get a idea about it's switching loss to compare these two MOSFETS to select the better one. The design that I speak is a push-pull topology and it does drain 20A peak current , switching frequency is 50KHz and how could I calculate the power dissipation due to the switching losses?
I have compared these two MOSFETS, Is that calculating the operating point from that graph is a good idea here? Regarding the 20A in mind so there will be 1V between Drain and the source. So which means approximately 20W as heat on it's peak. Regarding the Ipeak reaches linearly so approximate heat dissparation is around 10W per two MOSFETS, so 5W per a one. So do I still need a heat sink there?
What other options that I should concern,
Hi voltages causing by leakage flux. (use a clamp drive)
Reverse and forward switching delays. (use a gate drive)
5W is still too hot for a design regarding without heat sink. Could somebdoy suggest any other MOSFET which does the job with less heat. Ron is very small device.
EDIT: My supply voltage is 24V and I am not using a gate drive here. I'm using 5V TTL output to drive these two MOSFETS.