I want to model a GaN transistor and include a diode to simulate its reverse conduction above ~2 V with [an adjusted diode][1] using the following model statement:

`.model revGan D(Vj=2 Eg=3.4)`

[![enter image description here][2]][2]

The result is essentially that of a regular Si diode:

[![enter image description here][3]][3]

I also tried changing the `Eg` and `Vj` parameters, but they seem to have no effect whatsoever. Is that LTspice help page outdated? When using the `VDMOS` instead of the diode `D`, which has the body diode integrated, the parameters `Eg` and `Vj` still have no effect on the behavior.

  [1]: https://ltwiki.org/LTspiceHelp/LTspiceHelp/D_Diode.htm
  [2]: https://i.sstatic.net/wNXKR.png
  [3]: https://i.sstatic.net/0vf9M.png