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An transconductance (using voltage to control current) electronic component used for switching and amplification. Acronym for Metal-Oxide-Semiconductor Field-Effect Transistor. (from http://en.wikipedia.org/wiki/Transistor)

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Say you apply some differential signal \$V_{in}\$. Due to the differential gain of the amplifier, \$V_X\$ may now be, $$ V_X = V_N + \Delta $$ Similarly, $$ V_Y = V_N - \Delta $$ Since \$R_1\$ = …
answered Oct 25 '18 by sstobbe
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Mosfets are highly sensitive to ESD/EOS on the gate terminal. If M1 is wired with flying leads, I would add a zener across the gate/source terminals. In a pinch, for 5V signally you can use the base …
answered Feb 16 by sstobbe
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If the only change you made was exchange Q1 for a mosfet (Irfz34n). There are two issues you are facing. One reason your switching element is burning up is slow turn on/off times. With a 22k gate …
answered May 20 '17 by sstobbe
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When you PWM a peltier you run an already relatively low-efficiency device at an even lower efficiency. The heat pumped across the peltier is \$\propto I_p\$, while the losses due to joule heating are …
answered May 12 '17 by sstobbe
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I’ve been testing them in opposite pairs i.e pins 8 and 1, 7 and 2 etc. Am I testing them correctly and if so should I go ahead and replace the mosfet and see what happens? Yes, you are correct …
answered May 15 by sstobbe
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You have just demonstrated a phenomenon known as thermal-runway. The tempco of Vgs is negative, its specifics value varies from device to device versus the approximate -2mV/degC of a bjt. However as y …
answered Jun 5 '17 by sstobbe
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The reason the current is large through your top 2 PMOS pass transistors, is because they are almost always turned on. See an annotated version of your schematic, As you can see following the red …
answered Sep 28 '17 by sstobbe
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No, when the USB cable is disconnected net VBUS is floating. Its voltage has no defined state. You can add a pull-down on VBUS so it is approximately zero. However an NPN transistor would be a more s …
answered Sep 24 '17 by sstobbe
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Yes, the source/drain orientation of \$Q_3\$ matters. If you were to swap the terminals, you would have a stiff path from VBUS to the battery through the body diode of \$Q_3\$. With the orientation u …
answered May 22 by sstobbe
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If you wish to use n-channel MOSFETs as static switching elements, you will need to create an auxiliary power supply rail. To drive a high side n-MOS into triode you need bring the gate 5 V to 10V abo …
answered Oct 22 '18 by sstobbe
2
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amplifier for a cross-over frequency of 1 kHz. 5) Increase R3 to 1 \$k\Omega\$ for isolation of the amplifier's output from the capactive load of the MOSFET. …
answered Oct 11 '18 by sstobbe