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Instead of a diode, use an ideal diode made up of a P-channel MOSFET with the gate to ground. It will work just like a diode, but it will have 0 voltage drop, avoiding the issues others have brought up. Source


You need to think about the voltage drop across the diode (You can assume 0.7V for a bulk standard diode). Make sure the rail voltage specifications for your I2C eeprom do allow this in case the 3V3 rail is used. You also should add decoupling capacitors to your device on the VI2C line (100nF and 1uF) for good measure. Also make sure, that your application ...


There's a few problems. Designing circuits that are only partially powered are hard unless you know a lot about how the ICs are designed. When 3.3V supply provides 3.3V, the 25LC512 is powered via the diode which drops some voltage. If the diode is approximated to drop about 0.7V, the VI2C supply for the EEPROM is about 2.6V. That is very close to the 2.5V ...


I believe there's a simple way to use only n cells and a single dedicated bit pattern to achieve n/2 increase in durability. The dedicated bit pattern (e.g. 0xffff) is a marker which indicates an unused cell, and in normal operation at most one cell at a time has this value: uint16_t readWord (const uint16_t *address); void writeWord (uint16_t *address, ...

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