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the initial equation should be: $$\frac{Vs-Vin}{Rs}+\frac{Vo-Vin}{Rf}=\frac{Vin}{R}$$ assuming Rf is large, this simplifies to: $$\frac{Vs-Vin}{Rs}=\frac{Vin}{R}$$ $$\frac{Vs}{Rs}-\frac{Vin}{Rs}=\frac{Vin}{R}$$ $$R Vs - R Vin = Rs Vin$$ $$R Vs = R Vin + Rs Vin = (Rs+R) Vin$$ $$\frac{Vin}{Vs}=\frac{R}{R+Rs}$$


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answer \$1/R_{ds}=g_m=\Delta I_{ds}/ \Delta V_{ds}\$ @ Vgs While RdsOn is often rated in data sheets for ~ 2.5 to 3 x Vgs(th) aka Vt the threshold conduction at some std current like Ids=xxx uA with Vgs=Vds. Thus gm reduces as Vgs reduces towards Vt yet if Load , Rd >> Rds then Vds is near 0. So maximum voltage gain is when Rd is near Rds which changes ...


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To properly measure the fall time of Vout you need to connect something to that point that will pull the voltage down...the PMOS transistor can only pull Vout high. With just an oscilloscope probe connected to Vout the fall time will be very slow, because the oscilloscope probe is intentionally designed not to alter the circuit voltage. If you just want to ...


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Companies that make MOSFET devices often publish useful papers called application notes (or white papers, or bench notes, etc.) to help engineers better understand these devices. Listed below are three examples. I also recommend an Internet search using keywords like "MOSFET switch capacitive load". Texas Instruments Application Report SLVA883 Timing of ...


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