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There's a good article in the April 2021 issue of IEEE Spectrum (https://spectrum.ieee.org/semiconductors/materials/gallium-oxide-power-electronics-cool-new-flavor) that addresses this issue, though in the context of Gallium Oxide semiconductors. Here's what I gleaned from that article (note, I am not a device physicist). Most of the advantages of materials ...


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Perhaps the most obvious difference is that GaN is a direct band gap semiconductor, whereas SiC features and indirect band gap. GaN will therefore be preferred in light-related applications, such as LEDs. GaN devices often achieve higher switching frequencies compared to SiC, which in case of SMPS means smaller inductors/capacitors for the same power. I ...


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When selecting mosfets for power electronics it's hard to tell which 'bulk' material properties will translate into properties that engineers care about because it isn't just the material properties, but also how the mosfet is constructed. Source: https://spectrum.ieee.org/semiconductors/materials/gallium-oxide-power-electronics-cool-new-flavor GaN has ...


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SiC and GaN address different sectors. GaN is an often superior replacement for Si superjunction MOSFETs in the ~600V segments (mains switchers / rectifiers). As an example you could read about Google's Little Box Challenge from 2015, which was dominated by teams using GaN technology. SiC is best for higher utility voltages that GaN can't (yet?) address. I ...


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