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1 vote

Reducing the fall-time of a P-channel MOSFET

Here is a modified circuit: I didn't use the exact MOSFET model. The one you are using has a lot of gate charge. Also note the absolute maximum Vgs is 20V, but that's typical of such parts. Here is ...
Spehro Pefhany's user avatar
0 votes

Reducing the fall-time of a P-channel MOSFET

Q10 base current is four times collector current. That is wrong. Q10 is oversaturated. Ib should be 10 times less then Ic. You don’t need R14 and R15 since they drive followers. Remove R18 and place ...
Michal Podmanický's user avatar
1 vote

Voltage/Current ratings for dual SCR modules

The voltage rating should be for each SCR because in the half-bridge configuration of your component, there will be modes of operation where one SCR will be on and the other will be off and subject to ...
DKNguyen's user avatar
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0 votes

Single pulse generator

This circuit gives you about 500ms pulse to selenoid (or relay) after SW is permanently closed:
Michal Podmanický's user avatar
0 votes

Single pulse generator

You can use a non-retriggerable monoflop (also called a non-retriggerable monostable multivibrator) to generate pulses with a defined duration. The 74HC221 is a chip that does this. You need to add ...
Jonathan S.'s user avatar
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2 votes

The input to the gate of an N-channel MOSFET is a pulsed signal but I am getting a ramp signal

You've got two separate problems. The first is the low output current. You simply cannot get 10A through a 10 ohm resistor with a power supply of only 50V. Ohm's law (E=IR, rewritten to I=E/R) says ...
JRE's user avatar
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2 votes

The input to the gate of an N-channel MOSFET is a pulsed signal but I am getting a ramp signal

IRF530 has RdsON of 160 mOhms which corresponds to a dissipation of 16W at 10A, which is unnecessary. Here's an example thru-hole MOSFET with 10mOhm RdsON, although I believe SMD would be better ...
bobflux's user avatar
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