Timeline for BJT - absolute maximum base current?
Current License: CC BY-SA 3.0
8 events
| when toggle format | what | by | license | comment | |
|---|---|---|---|---|---|
| Nov 13, 2015 at 19:26 | vote | accept | nsayer | ||
| Mar 6, 2015 at 21:24 | comment | added | Russell McMahon♦ | If I was doing the same task nowadays I'd use a suitably low Rdson MOSFET. | |
| Mar 6, 2015 at 21:22 | comment | added | Russell McMahon♦ | @IgnacioVazquez-Abrams , nsayer: As a BJT transistor is driven with decreasing forced Beta (ie higher base drive per collector current) Vsat falls and values much lower than normally achieved can be obtained. I have used a transistor with Ibase ~= 10 x Icollector!!! to obtain an extremely low Vsat - in the mV range. This was used to turn on a PNP transistor feeding a resistive divider for an ADC circuit, thereby ensuring very low error from the 'switch'. As ADC divider current was a small fraction of a mA and operation was only occasional the mA or so of drive current was entirely acceptable. | |
| Mar 6, 2015 at 19:37 | answer | added | Spehro 'speff' Pefhany | timeline score: 6 | |
| Mar 6, 2015 at 19:12 | answer | added | brhans | timeline score: 2 | |
| Mar 6, 2015 at 19:07 | comment | added | nsayer | @IgnacioVazquez-Abrams Clearly. The question is largely an academic one. | |
| Mar 6, 2015 at 18:57 | comment | added | Ignacio Vazquez-Abrams | There's no point in saturating the transistor beyond full saturation. | |
| Mar 6, 2015 at 18:51 | history | asked | nsayer | CC BY-SA 3.0 |