Timeline for Drift and diffusion in semiconductors
Current License: CC BY-SA 3.0
5 events
| when toggle format | what | by | license | comment | |
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| Dec 22, 2016 at 14:07 | comment | added | LvW | @M.L. valuating the equation as given in David`s answer you will see that it is the electric field that matters primarily. And which quantity is the cause of this field? It is the applied base-emitter voltage Vbe (and NOT the base current). Hence, the 3rd statement in the copy of the book you have provided is wrong!. Please note that, unfortunately, there are some other books which also contain similar errors - perhaps due to historical reasond. But, undoubtly, the BJT is a voltage-controlled device (remember the working principle of a pn diode). | |
| Oct 28, 2016 at 8:35 | comment | added | DavideM | Please, @M.L, if you find the answer useful, at least upvote it. That's how this site works. | |
| Oct 22, 2016 at 9:19 | comment | added | DavideM | That depends on the structure of the device. What I said holds in general for semiconductors, but electron devices are more complex than that and according to their structure and working principle you can tell if diffusion or drift is exploited. Of course, this means studying and understanding how each device works, thus I don't have a general rule to tell you; maybe someone more expert and knowledgeable than me can clear your doubts. P.S. in general it's not appropriate to create an answer to comment. If you told me what your notes said, I'd have trusted you ;) | |
| Oct 22, 2016 at 8:39 | comment | added | M.L | Thanks! That clears my doubts. but from my notes it says bjt is diffusion based which mKes me confuse and MOSFET is drift based. Can I know how we know which will dominant to the other ?thanks . Picture is provided above | |
| Oct 22, 2016 at 8:16 | history | answered | DavideM | CC BY-SA 3.0 |