My textbook[Fundamentalstextbook [Fundamentals of Microelectronics: B. Razavi] claims that in order to relax the tradeoff between voltage gain and voltage headroom, we use a current source in place of the load resistor. I don't understand the reasoning behind it, and neither has it been mentioned in the book.
My textbook[Fundamentals of Microelectronics: B. Razavi] claims that in order to relax the tradeoff between voltage gain and voltage headroom, we use a current source in place of the load resistor. I don't understand the reasoning behind it, neither has it been mentioned in the book.
My textbook [Fundamentals of Microelectronics: B. Razavi] claims that in order to relax the tradeoff between voltage gain and voltage headroom, we use a current source in place of the load resistor. I don't understand the reasoning behind it, and neither has it been mentioned in the book.
My textbooktextbook[Fundamentals of Microelectronics: B. Razavi] claims that in order to relax the tradeoff between voltage gain and voltage headroom, we use a current source in place of the load resistor. I don't understand the reasoning behind it, neither has it been mentioned in the book. The image is that of BJT, I could not find one of MOSFET. My apologies for the same. You just have to assume a PMOS in place of the first transistor, and an NMOS in place of the second.
My textbook claims that in order to relax the tradeoff, we use a current source in place of the load resistor. I don't understand the reasoning behind it, neither has it been mentioned in the book. The image is that of BJT, I could not find one of MOSFET. My apologies for the same. You just have to assume a PMOS in place of the first transistor, and an NMOS in place of the second.
My textbook[Fundamentals of Microelectronics: B. Razavi] claims that in order to relax the tradeoff between voltage gain and voltage headroom, we use a current source in place of the load resistor. I don't understand the reasoning behind it, neither has it been mentioned in the book.
