Call me crazy, but I don't think R2 matters at all if V+ is ground of floating (or ever?). Just leave it out. The operating principle of a BJT is that base-emitter current is amplified (by the transistor's current gain factor beta) to generate the collector-emitter current, and the base-emitter junction incurs a diode voltage drop...
If V+ is floating, no collector-emitter current can develop, because what would be the source of that moving charge (conservation of energy and all that).
If V+ is ground, again no collector-emitter current can develop, because current flows from a higher potential to a lower potential. If both ends of that path are at GND, no current can flow between them.
Unless I'm missing something, in which case I'm sure the community will chime in.