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Jan 28, 2019 at 9:28 vote accept xakepp35
Jan 22, 2019 at 5:01 comment added D.A.S. You may want to measure short term ESR and long term ESR which have different time constants using current sense and active loads electronics.stackexchange.com/questions/376850/… It depends if you choose high or low side sensing and loading for Pch Nch options. Look at Battery Coulomb counter IC designs
Jan 22, 2019 at 4:21 comment added xakepp35 @Jasen But that is at least doable, that is great
Jan 22, 2019 at 4:20 comment added Jasen Слава Україні you stillneed to control the gate - you could use a resistor pull-up and another N-FET do that I guess.
Jan 22, 2019 at 4:19 comment added xakepp35 @Jasen What if I add 12v rail as a power source?
Jan 22, 2019 at 4:17 comment added Jasen Слава Україні a boost converter could do it. but not easier than a P-FET
Jan 22, 2019 at 3:57 comment added xakepp35 @Jasen So, a P mosfet actually better fits here (as it requires gate pulled below). Thanks for remark. So you vote for it is impossible, or would require some boost converter?
Jan 22, 2019 at 3:55 history edited xakepp35 CC BY-SA 4.0
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Jan 22, 2019 at 3:54 comment added Jasen Слава Україні you don't need to short the +5 got ground, only the bottom end or R2 needs to be connected to +5. That's going to be tricky to do with a N-channel-MOSFET because to do that you need a voltage higher than 5V for the MOSFET gate.
Jan 22, 2019 at 3:46 answer added Jasen Слава Україні timeline score: 1
Jan 22, 2019 at 3:32 history edited xakepp35 CC BY-SA 4.0
added 139 characters in body
Jan 22, 2019 at 3:21 history asked xakepp35 CC BY-SA 4.0