Timeline for In a thin-film transistor (on insulating substrate) what is the difference between putting a load on the source or drain side of the transistor?
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| Jul 18, 2019 at 19:42 | comment | added | Cam | Hi Juan, but there is a difference, this is what the textbook pages are explaining in my post. If you keep the circuit the same (same OLED position, same current direction), and change from p type to n type transistor (assuming transistor spec are identical), then the overall current becomes sensitive to the OLED resistance in one type, but not sensitive to OLED resistance with the other ttype. We can ignore the OLED properties and assume a simple linear resistor. | |
| Jul 18, 2019 at 4:00 | comment | added | Juan | You only care about the reasoning behind the location of the OLED? the reason as far as I know is to compensate for the threshold voltage of the first transistor(T1(Vt)) by adding the second transistor voltage (T2(Vt)) to the data voltage stored in the capacitor. besides that you are correct, there is no difference in where you place the OLED. source for what I am saying (ikee.lib.auth.gr/record/292357/files/GRI-2017-19696.pdf) page 53 this is assuming T1 and T2 are identical TFTs | |
| Jul 18, 2019 at 3:26 | comment | added | Cam | See the text book page I added to understand the issue. | |
| Jul 18, 2019 at 3:24 | comment | added | Cam | It's not an issue of terminal. A thin film transistor is on an insulating substrate. You need to read more carefully, I have read the answer you linked to, it refers again to a 4th terminal. Are you saying the glass substrate has a different fermi level from the channel, and this energy difference is different for p and n channel? Then say so clearly...I may not be as confused as you are :P | |
| Jul 18, 2019 at 2:25 | history | answered | Juan | CC BY-SA 4.0 |