Timeline for Transistor - Saturation and Active Regions
Current License: CC BY-SA 4.0
4 events
| when toggle format | what | by | license | comment | |
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| May 3, 2020 at 4:56 | vote | accept | CommunityBot | ||
| May 2, 2020 at 21:24 | comment | added | Reroute | They test the gain out of saturation, in this case likely by having the Vce junction across a 1V power supply, they then feed in known current to the base and measure the current drawn from that 1V supply, in saturation it can be less, Its just how they chose to test the gain, Absolue maximum is 45V but won't live long there, other things are how much your switching, if fully saturated and trying to switch 500mA you have about 0.4V * 0.5A = 0.2W + whatever is dissipated in the base junction | |
| May 2, 2020 at 16:21 | comment | added | user220456 | Thank you for your answer. Got clarity. But in your first answer, you say 1V between Vce. And that is what it says in the datasheet too. But one question. When in the active region, the excess voltage gets dropped between the collector and the emitter. So, when the transistor operating in the active region, what is the maximum voltage that can appear safely drop across the collector and emitter? In this transistor case, is it the absolute maximum Vce of 40V? | |
| May 2, 2020 at 14:27 | history | answered | Reroute | CC BY-SA 4.0 |