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Mar 31, 2021 at 19:50 comment added DKNguyen @ThreePhaseEel Interesting. I did not know that. I always assumed you only saw it on signal transistors because of the more diverse uses.
Mar 31, 2021 at 16:25 comment added supercat @ThreePhaseEel: I think that even on large-signal transistors one would have a choice of how to make the body connection except that half of the available connection surface area is on the substrate, and so connecting a lead to the substrate and then shorting that to the source avoids the need to use top-side surface area for the source connection. In an IC, one generally wants transistor source connections to be on the same side of the chip as everything else, but in a discrete transistor having it on the opposite side allows better electrical connectivity.
Mar 31, 2021 at 11:45 comment added ThreePhaseEel Much of the issue with the body connection is that you can only break it out on lateral FET structures, which are only good for small-signal work. The vertical (V, trench) MOSFET structure used almost universally for power-switching FETs doesn't give you much of a choice as to where the body connection gets made...
Mar 30, 2021 at 23:03 history edited DKNguyen CC BY-SA 4.0
added 157 characters in body
Mar 30, 2021 at 23:00 vote accept richbai90
Mar 30, 2021 at 22:58 history edited DKNguyen CC BY-SA 4.0
added 157 characters in body
Mar 30, 2021 at 22:52 history answered DKNguyen CC BY-SA 4.0