I am trying to design a simple battery operated circuit (ESP8266) controlled by a MOSFET (schematic below).

I was going through certain videos to understand better and came across this video: https://www.youtube.com/watch?v=XVoAI86Wo7o.

He talks about about the MOSFET V_DS requirement to be 0.5 V at 2.57 time. He is subtracting the min voltage requirement of ESP8266 which is 2.5 V from a battery voltage of 3.0 V and thereby determining the V_DS to be 0.5 V.

I thought the V_DS is the max voltage that can flow between the source and drain terminals which in this case is 4.2 V. What am I missing? Are the following calculations correct? I seem to be confused with this.

The P-channel controls the high side positive rail to MCU while the N-channel controls the P-channel MOSFET.

V_DS(max) across PFET will be maximum 4.2 V and min of 3 V when used with a LIPO.

V_GS(min) across PFET = -3 V

V_DS(max) across NFET will also be 4.2 V

V_GS(min) across NFET = 3 V

I_DD continuous across PFET will be a max of 300 mA

I am trying to design a simple battery operated circuit (ESP8266) controlled by a MOSFET (schematic below).

I was going through some videos to understand better and came across this video.

He talks about about the MOSFET V_DS requirement to be 0.5 V at 2.57 time. He is subtracting the min voltage requirement of ESP8266 which is 2.5 V from a battery voltage of 3.0 V and thereby determining the V_DS to be 0.5 V.

I thought the V_DS is the max voltage that can flow between the source and drain terminals which in this case is 4.2 V. What am I missing? Are the following calculations correct? I seem to be confused with this.

The P-channel controls the high side positive rail to MCU while the N-channel controls the P-channel MOSFET.

V_DS(max) across PFET will be maximum 4.2 V and min of 3 V when used with a LIPO.

V_GS(min) across PFET = -3 V

V_DS(max) across NFET will also be 4.2 V

V_GS(min) across NFET = 3 V

I_DD continuous across PFET will be a max of 300 mA

I am trying to design a simple battery operated circuit (ESP8266) controlled by a Mosfet (schematic attached). I was going through certain videos to understand better and came across this video  https://www.youtube.com/watch?v=XVoAI86Wo7o.

He talks about about the mosfet Vds requirement to be 0.5V at 2.57 time. He is subtracting the min voltage requirement of ESP8266 which is 2.5V from a battery voltage of 3.0 and thereby determining the Vds to be 0.5.

I thought the Vds is the max voltage that can be flow between the source and drain terminals which in this case is 4.2V. What am i missing. Are the following calculations correct. I seem to be confused with this.

The P Channel controls the high side positive rail to MCU while the N Channel controls the P Channel Mosfet.

Vds max across PFET will be maximum 4.2V and min of 3 when used with a LIPO.

min Vgs across PFET = -3

Vds max across NFET will also be 4.2V

min Vgs across NFET = 3

Idd continous across PFET will be a max of 300mA

I am trying to design a simple battery operated circuit (ESP8266) controlled by a MOSFET (schematic below).

I was going through certain videos to understand better and came across this video: https://www.youtube.com/watch?v=XVoAI86Wo7o.

He talks about about the MOSFET V_DS requirement to be 0.5 V at 2.57 time. He is subtracting the min voltage requirement of ESP8266 which is 2.5 V from a battery voltage of 3.0 V and thereby determining the V_DS to be 0.5 V.

I thought the V_DS is the max voltage that can flow between the source and drain terminals which in this case is 4.2 V. What am I missing? Are the following calculations correct? I seem to be confused with this.

The P-channel controls the high side positive rail to MCU while the N-channel controls the P-channel MOSFET.

V_DS(max) across PFET will be maximum 4.2 V and min of 3 V when used with a LIPO.

V_GS(min) across PFET = -3 V

V_DS(max) across NFET will also be 4.2 V

V_GS(min) across NFET = 3 V

I_DD continuous across PFET will be a max of 300 mA