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Janik
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I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTspice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800 mV to ~500 mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, that's why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3.9 MΩ as R1 and 100 kΩ as R2. However the voltage at the gate is 3.5 V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3 mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5 µA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didn't change anything.

Am I missing something here? What can cause such a high (leakage?) current through the gate?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded following results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesn't measure the same. This prompted me to check the maximum soldering temperature for this part - its 300°C for 10 s at 1.6 mm from the case. I soldered everything with 330°C. I now tried again with low temperature solder at 280°C and the circuit behaves like predicted.

Another main probable cause for the failure is ESD - I did not follow proper ESD techniques and MOSFETs without built-in ESD protection are very sensitive to ESD.

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTspice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800 mV to ~500 mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, that's why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3.9 MΩ as R1 and 100 kΩ as R2. However the voltage at the gate is 3.5 V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3 mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5 µA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didn't change anything.

Am I missing something here? What can cause such a high (leakage?) current through the gate?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded following results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesn't measure the same. This prompted me to check the maximum soldering temperature for this part - its 300°C for 10 s at 1.6 mm from the case. I soldered everything with 330°C. I now tried again with low temperature solder at 280°C and the circuit behaves like predicted.

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTspice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800 mV to ~500 mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, that's why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3.9 MΩ as R1 and 100 kΩ as R2. However the voltage at the gate is 3.5 V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3 mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5 µA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didn't change anything.

Am I missing something here? What can cause such a high (leakage?) current through the gate?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded following results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesn't measure the same. This prompted me to check the maximum soldering temperature for this part - its 300°C for 10 s at 1.6 mm from the case. I soldered everything with 330°C. I now tried again with low temperature solder at 280°C and the circuit behaves like predicted.

Another main probable cause for the failure is ESD - I did not follow proper ESD techniques and MOSFETs without built-in ESD protection are very sensitive to ESD.

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winny
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I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. BeforeBefore building it, I designed the circuit in LTSpiceLTspice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800mV~800 mV to ~500mV~500 mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, thatsthat's why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3M93.9 MΩ as R1 and 100k100 kΩ as R2. However the voltage at the gate is 3,5V.5 V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3mA~3 mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5uA5 µA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didntdidn't change anything.

Am I missing something here  ? What can cause such a high (leakage?) current through the gate  ?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded follwingfollowing results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesntdoesn't measure the same. This prompted me to check the maximum soldering temperature for this part - its 300C300°C for 10sec10 s at 1.6mm6 mm from the case. I soldered everything with 330C330°C. I now tried again with low temperature solder at 280C280°C and the circuit behaves like predicted.

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTSpice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800mV to ~500mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, thats why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3M9 as R1 and 100k as R2. However the voltage at the gate is 3,5V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5uA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didnt change anything.

Am I missing something here  ? What can cause such a high (leakage?) current through the gate  ?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded follwing results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesnt measure the same. This prompted me to check the maximum soldering temperature for this part - its 300C for 10sec at 1.6mm from the case. I soldered everything with 330C. I now tried again with low temperature solder at 280C and the circuit behaves like predicted.

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTspice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800 mV to ~500 mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, that's why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3.9 MΩ as R1 and 100 kΩ as R2. However the voltage at the gate is 3.5 V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3 mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5 µA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didn't change anything.

Am I missing something here? What can cause such a high (leakage?) current through the gate?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded following results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesn't measure the same. This prompted me to check the maximum soldering temperature for this part - its 300°C for 10 s at 1.6 mm from the case. I soldered everything with 330°C. I now tried again with low temperature solder at 280°C and the circuit behaves like predicted.

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Janik
  • 33
  • 4

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTSpice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800mV to ~500mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, thats why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3M9 as R1 and 100k as R2. However the voltage at the gate is 3,5V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5uA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didnt change anything.

Am I missing something here ? What can cause such a high (leakage?) current through the gate ?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded follwing results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesnt measure the same. This prompted me to check the maximum soldering temperature for this part - its 300C for 10sec at 1.6mm from the case. I soldered everything with 330C. I now tried again with low temperature solder at 280C and the circuit behaves like predicted.

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTSpice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800mV to ~500mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, thats why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3M9 as R1 and 100k as R2. However the voltage at the gate is 3,5V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5uA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didnt change anything.

Am I missing something here ? What can cause such a high (leakage?) current through the gate ?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded follwing results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

I am building a simple battery undervoltage protection circuit. It should stop conducting once the input voltage drops below a certain point. This should be achieved by utilizing a PMOS and setting the gate voltage with a resistor divider to select the critical input voltage at which the PMOS is not turned on anymore. Before building it, I designed the circuit in LTSpice, which includes a specific model for the MOSFET in use: https://goodarksemi.com/docs/datasheets/mosfets/BSS84.pdf

Circuit

Simulation shows satisfying results: Sim Green is the "output" voltage across the load resistor R3 and blue is the "input" voltage generated from V1 (in reality my battery). The gate voltage (red) is moving from ~800mV to ~500mV.

Since this was looking good, did a quick layout and lasered a prototype:

Ground is on top and the input voltage is connected on the bottom. prototype

(please excuse my terrible soldering skills)

I tested various resistor values, thats why a different resistor is in the picture. The circuit behaves very different compared to the simulation. The gate voltage node is sitting at very high voltages, even if I drastically lower the resistor R2. The shown circuit uses a 3M9 as R1 and 100k as R2. However the voltage at the gate is 3,5V.

I connected a multimeter and measured the current from gate to ground (I shorted the gate to ground that way) and it shows a current of ~3mA. This kind of current obviously cannot come through the path of R1, so it must be related to the MOSFET. Looking through the datasheet, it mentions a Gate-Body-Leakage current of max. 5uA - this is a whole magnitude off my measurement. Thinking that the MOSFET is broken, I replaced it, that didnt change anything.

Am I missing something here ? What can cause such a high (leakage?) current through the gate ?

Update: The circuit behaves as it should without the MOSFET. The diode test of the MOSFET pins yielded follwing results: DS: 0.6 SG: 0.97 GS: 0.92 DG: 1.3 - the others were open.

Solution: A never soldered MOSFET doesnt measure the same. This prompted me to check the maximum soldering temperature for this part - its 300C for 10sec at 1.6mm from the case. I soldered everything with 330C. I now tried again with low temperature solder at 280C and the circuit behaves like predicted.

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Janik
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Janik
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