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Metal-Oxide-Semiconductor Field-Effect Transistor, a type of field-effect transistor (FET). MOSFETs have an insulated gate, the voltage of which determines the conductivity of the device. This can be used for amplifying or switching electronic signals. (From: Wikipedia)

3 votes

driving high-side N-channel MOSFETs in H-Bridge

I pressume that by power loss, you refering to the power dissipation on the transistors. So in this case, P-channel MOSFETs have high on-resistence, so its common for high current applications to use …
Diego C Nascimento's user avatar
0 votes
2 answers
243 views

IRF740 datasheet. Error in the datasheet or I'm interpreting it wrong?

According to the IRF740 data-sheet from IR or from Vishay (they are nearly the same, the Vishay is better to read), the Qg is specified as 63nC under Id = 10A Vds = 320V and Vgs = 10V. But at page 4, …
Diego C Nascimento's user avatar
2 votes
1 answer
4k views

High side N-Channel IGBT/Mosfet drive methods

According to this paper http://www.fairchildsemi.com/an/AN/AN-9742.pdf "However, a transformer may cause half bridge crossconduction due to the offset voltage of gatepulse deadtime stage." …
Diego C Nascimento's user avatar
3 votes
Accepted

Need help trying to design an H-Bridge to power electromagnet

The charge-discharge voltage of the gate, is between the gate-source of the MOSFET. You need to drive the gate of the P-MOSFET to the source voltage that, in your case is 18V to turn it off. … This is just a sketch With this circuit the P-MOSFET gate-source will be 0V (thought pull-up resistor) and it will be non-conducting. …
Diego C Nascimento's user avatar