Timeline for Transistor - rise time for switching applications
Current License: CC BY-SA 3.0
16 events
| when toggle format | what | by | license | comment | |
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| Mar 18, 2018 at 13:30 | comment | added | Janka | If you care about switching speed, a Darlington is not your friend. | |
| Mar 18, 2018 at 13:22 | history | bumped | CommunityBot | This question has answers that may be good or bad; the system has marked it active so that they can be reviewed. | |
| Feb 8, 2018 at 11:44 | history | bumped | CommunityBot | This question has answers that may be good or bad; the system has marked it active so that they can be reviewed. | |
| Jan 7, 2018 at 8:33 | history | bumped | CommunityBot | This question has answers that may be good or bad; the system has marked it active so that they can be reviewed. | |
| Dec 8, 2017 at 6:59 | history | bumped | CommunityBot | This question has answers that may be good or bad; the system has marked it active so that they can be reviewed. | |
| Oct 5, 2017 at 5:15 | comment | added | jonk | @Davide_sd I only just saw this today. Sorry. What you saw on your multimeter may be more about the multimeter than anything else. Have you tested it with known current pulses over various frequencies to find out? | |
| Sep 26, 2017 at 15:11 | comment | added | Davide_sd | @sstobbe Thank you for linking the document, I'll definitely take a good look at it! :) | |
| Sep 26, 2017 at 15:10 | history | edited | Davide_sd | CC BY-SA 3.0 |
added study case
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| Sep 26, 2017 at 6:36 | answer | added | analogsystemsrf | timeline score: 1 | |
| Sep 25, 2017 at 19:16 | comment | added | next-hack | The reason some suggest not to use low Ic/Ib ratios (i.e. they warn you against putting the BJT in deep saturation) is because the deeper the saturation, the larger the stored charge in the base, the longer the turn-off time (like a diode). That's why TTL-Schottky were so fast. A Schottky diode was in parallel to the base-collector junction, to prevent it from turning on. | |
| Sep 25, 2017 at 17:57 | comment | added | sstobbe | For switching application the charge control model is the most appropriate see: ecee.colorado.edu/~bart/book/book/chapter5/pdf/ch5_6_2.pdf, otherwise a FET is an easier path to take | |
| Sep 25, 2017 at 16:47 | comment | added | bobflux | Have you considered using a MOSFET instead? | |
| Sep 25, 2017 at 16:23 | comment | added | Bruce Abbott | Intrinsic rise and fall times are usually specified in the datasheet, but practical rise time is often limited by circuit impedance. What maximum frequency and duty cycle resolution do you want, and what load will the transistor be switching? | |
| Sep 25, 2017 at 16:21 | comment | added | The Photon | Are you talking about an NPN low-side switch application? Because then rise time at the output might depend on the pull-up (load) on the collector as much as on the BJT characteristics. It would help to know exactly what circuit you're asking about and how much current you want to switch. | |
| Sep 25, 2017 at 16:03 | review | First posts | |||
| Sep 25, 2017 at 16:18 | |||||
| Sep 25, 2017 at 16:02 | history | asked | Davide_sd | CC BY-SA 3.0 |