I am trying to implement a high side gate driver using IR2101. The power supply of the IGBT can go up to 60V and 9A. The idea is I switch ON Q1 using high side circuitry and then switch OFF Q1 and switch on Q2 so that the capacitor can discharge through the high power 10 ohm resistor.

However the problem is the high side gate driver circuitry does not work. If I measure the voltage VB-Vs I get 12V (correct since my 4.4uF cap[tantalum] charges), if I measure VB-HO I get 12V (dont know why this happens) and the voltage at HO-Vs(emitter of Q1) is 0V. Why is it that if I give 3.3V signal my output voltage HO is 0V w.r.t emitter of Q1.

Can I please get some help here. I have seen this gate driver circuitry used in plenty applications, however I cant get it to work here.

I am trying to implement a high-side gate driver using an IR2101. The power supply of the IGBT can go up to 60 V and 9 A. 

The idea is to switch ON Q1 using high-side circuitry and then switch OFF Q1 and switch on Q2 so that the capacitor can discharge through the high-power 10 Ω resistor.

The problem, however, is that the high-side gate driver circuitry does not work. If I measure the voltage VB-Vs I get 12 V (correct since my 4.4 μF tantalum cap charges). If I measure VB-HO I get 12 V (I don't know why this happens), and the voltage at HO-Vs  (emitter of Q1) is 0 V. 

Why is it that if I give a 3.3 V signal my output voltage HO is 0 V w.r.t. the emitter of Q1?

Can I please get some help here? I have seen this gate driver circuitry used in plenty of applications; I can't, however, get it to work here.