I am trying to implement a high-side gate driver using an IR2101. The power supply of the IGBT can go up to 60 V and 9 A.
The idea is to switch ON Q1 using high-side circuitry and then switch OFF Q1 and switch on Q2 so that the capacitor can discharge through the high-power 10 Ω resistor.
The problem, however, is that the high-side gate driver circuitry does not work. If I measure the voltage VB-Vs I get 12 V (correct since my 4.4 μF tantalum cap charges). If I measure VB-HO I get 12 V (I don't know why this happens), and the voltage at HO-Vs (emitter of Q1) is 0 V.
Why is it that if I give a 3.3 V signal my output voltage HO is 0 V w.r.t. the emitter of Q1?
Can I please get some help here? I have seen this gate driver circuitry used in plenty of applications; I can't, however, get it to work here.