How can Can I model a diode with higher than usual junction voltage in LTspice using the "Eg" and "Vj" parameters?

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edited Feb 3, 2023 at 9:41

tobalt

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I want to model a GaN transistor and include a diode to simulate its reverse conduction above ~2 V with an adjusted diode using the following model statement:

.model revGan D(Vj=2 Eg=3.4)

The result is essentially that of a regular Si diode:

I also tried changing the Eg and Vj parameters, but they seem to have no effect whatsoever. Is that LTspice help page outdated? When using the VDMOS instead of the diode D, which has the body diode integrated, the parameters Eg and Vj still have no effect on the behavior.

I want to model a GaN transistor and include a diode to simulate its reverse conduction above ~2 V with an adjusted diode using the following model statement:

.model revGan D(Vj=2 Eg=3.4)

The result is essentially that of a regular Si diode:

I also tried changing the Eg and Vj parameters, but they seem to have no effect whatsoever. Is that LTspice help page outdated?

I want to model a GaN transistor and include a diode to simulate its reverse conduction above ~2 V with an adjusted diode using the following model statement:

.model revGan D(Vj=2 Eg=3.4)

The result is essentially that of a regular Si diode:

I also tried changing the Eg and Vj parameters, but they seem to have no effect whatsoever. Is that LTspice help page outdated? When using the VDMOS instead of the diode D, which has the body diode integrated, the parameters Eg and Vj still have no effect on the behavior.