I am planning to replace the NCEP85T16 MOSFET in a Easun SV IV hybrid inverter. The blown out MOSFETs are on the 48 V battery DC boost side of the inverter. I found a possible replacement in Toshibas TK2R9E10PL easily found on local market. Datasheets are here: For NCEP85T16 https://datasheet.lcsc.com/lcsc/2004201608_Wuxi-NCE-Power-Semiconductor-NCEP85T16_C503003.pdf
For TK2R9E10PL https://ro.mouser.com/datasheet/2/408/TK2R9E10PL_datasheet_en_20210202-2509666.pdf
For the TK2R9E10PL will be a improvement. It has lower rds-on, higher breakdown voltage, higher current. But, according to the datasheet, it has higher input capacitance (9500 pF vs 8500 pF) and higher gate charge (161 nC vs 105 nC).
MOSFET driver is NSi6602 https://www.szhaina.com/uploads/media/20220417/1650184782.pdf
I wonder if the TK2R9E10PL can be a good replacement of the NCEP85T16?