Why collector current in NPN transistor in CE mode is almost independent of the Collector-Emitter voltage? Doesn't increasing reverse bias voltage (Vce) decreases the width of the base (due to increase in width of depletion region) and as a result more electrons are swept from base to collector region and in turn increases the collector current (Ic)?

Why is the collector current in an NPN transistor in CE mode almost independent of the collector-emitter voltage? 

Doesn't increasing the reverse bias voltage (Vce) decrease the width of the base (due to increase in width of depletion region) and as a result, aren't more electrons swept from the base to the collector region which in turn increases the collector current (Ic)?

Why collector current in NPN transistor in CE mode is almost independent of the Collector-Emitter voltage?

Why collector current in NPN transistor in CE mode is almost independent of the Collector-Emitter voltage? Doesn't increasing reverse bias voltage (Vce) decreases the width of the base (due to increase in width of depletion region) and as a result more electrons are swept from base to collector region and in turn increases the collector current (Ic)?