If one tacks a P-type semiconductor to an N-type semiconductor, a P-N junction forms in which electrons diffuse from the N-type to the P-type causing a diffusion current. Some time passes, and an electric field in the junction appears causing a drift current. At equilibrium, the diffusion current equals the drift current, hence a resultant of zero current is established.
Since in the forward biased mode, the built in electric field is weakened allowing more more diffusion current, I would expect that in the reverse biased mode more drift current should pass, but this is not the case. Why?
In this discussion, I am assuming no avalanche breakdown has yet occurred.
Another question I would like to ask at this point is that, if in the unbiased P-N junction, the depletion layer is depleted of any mobile charges, where does the drift current come from?