I am trying to design an ultra-low-noise pre-amplification stage for a MEMS. The amplification consists of a non-inverting amplifier specifically chosen to have less than 4 nV/sqrt(Hz) as input voltage noise. The MEMS is on a separate PCB connected to the amplifier PCB via an SMA connector.
I read multiple times that such low noise circuits should be placed in a metallic enclosure to avoid picking up electromagnetic interference. In some cases, the case is not grounded. Does the shielding still work then? If it's grounded, doesn't that introduce a parasitic capacitor between the traces and the grounded shield, for example?
Edit 1:
The MEMS has a piezoelectric transducer that is modeled by the photodiode equivalent circuit. The sensor output current is in the order of ~200nA with a frequency up to 1MHz which creates a couple of constraints in my circuit:
The input capacitance should stay as low as possible to avoid the partitioning of the current and thus a decrease in the voltage at the non inverting input of the op-amp.
The noise should be kept as low as 4nV/sqrt(Hz). Thus the low feedback resistors.
Have as low input bias current as possible to avoid saturating the op-Amp
simulate this circuit – Schematic created using CircuitLab
Note: The 3.5pF capacitor at the input is due to the SMA connector (the 2 PCBs will be connected directly to each other via a female-male SMA connection.) The 10pF capacitor at the output is due to the coaxial cable.