PMOS is more expensive and tends to have more gate capacitance for the same RDS_on (P-channel semiconductor doesn't conduct as well, so everything is bigger).
Use of N-channel FETs isn't exclusive. The gate drive is simpler at low voltages (below 15V or so) if you use PMOS on the top side; if your current needs are also modest it may be cost effective to use the more expensive pass transistors so that you can use simpler gate drive circuitry.
But definitely as soon as the supply voltage starts getting close to the maximum gate-source voltage, or if the FET size and cost is exceeding the size and cost of the gate drivers, you should just use NMOS.