To illustrate how flash memory works, I thought to build a primitive FGMOSFET and show that it stores a single bit of information (charged, uncharged).
It would require a high voltage to charge, it could be unreliable and leak current, but it would show the basic idea, and I could disconnect and reconnect it, and show with a multimeter that it remains charged or uncharged.
Is that viable?
How would I do it?
These FETs rely on tunneling.
To deposit charge into a bit, the insulation must be very thin, so under the stresses of high_voltage, the probability of electron movement becomes high/certain.
And afterward, with "normal" operating voltage, the probability of electron escaping becomes near zero, so the "bit" remains charged.
Thus you need to build a system with extremely thin insulation, that is of very high quality, very pure.
And with those skills, semiconductor fabs will want to hire you.
