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"Complementary Metal-Oxide Semiconductor" is a process which implements a combination of PMOS and NMOS transistors. Most current digital logic is implemented in CMOS. Its cost-effectiveness due to being so widespread means many other applications have become common as well, such as in analog design, image sensors, telecommunication, etc.

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Please help me explain the overshoot and undershoot in CMOS inverter

Rabaey book says that: Notice especially the overshoots on the simulated output signals. These are caused by the gate-drain capacitances of the inverter transistors, which couple the steep v …
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2 answers
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When does the NMOS form the channel? VGS > VTH or VGB > VTH?

When does the NMOS form the channel? VGS > VTH or VGB > VTH? I see that textbook talks about VGS > VTH, channel formed, but the capacitor is formed between the gate and the body, so i think it shou …
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0 votes
1 answer
441 views

CMOS Fabrication Process - Ion Implantation

During the process of producing the source and drain of the MOSFET, people use a technique called ion implantation. So my question is why use ion not atom? Thanks very much!
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